 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| T R I Q U I N T S E M I C ON D U C TO R, I N C. TGA8349-SCC Gain Block Amplifier q q q q q q PHOTO ENLARGEMENT DC to 14 -GHz Frequency Range 1.2:1 Input SWR, 1.3:1 Output SWR 11-dB Small Signal Gain 8349 16-dBm Output Power at 1 -dB Gain Compression at Midband 3.1-dB Noise Figure at Midband 3,4290 x 2,2860 x 0,101 mm (0.135 x 0.090 x 0.004 in.) DESCRIPTION The TriQuint TGA8349 -SCC is a GaAs monolithic low -noise distributed amplifier designed for use as a multi -octave general-purpose gain block. Nine 122 -m gate width FETs provide 11-dB nominal gain and 3.1- dB noise figure from DC to 14 -GHz. Typical power output is 16 -dBm at 1-dB gain compression. Typical input SWR is 1.2:1 and output SWR is 1.3:1. Gr ound is provided to the circuitry through vias to the backside metallization.The DC to 14 -GHz frequency range, dual -gate AGC control and gain-flatness characteristics make the TGA8349 -SCC suitable for many system applications including fiber optic. The TGA8349-SCC is supplied in chip for m and is engineer ed for high -volume automated assembly. All metal sur faces are gold plated to be compatible with ther mocompression and thermosonic wire-bonding processes. TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGA8349-SCC TYPICAL SMALL SIGNAL POWER GAIN Small-Signal Gain (dB) 20 16 V 8V V ++== 8 V VCTR L ==1.5 VV VCTRL 1.5 + II + = 80 mA T A ==25 C 25C T A 12 8 4 0 0 2 4 6 8 10 12 14 Frequency (GHz) TYPICAL NOISE FIGURE 8 7 6 ++ V V= 8 V V =8 VCTR L = = 1.5 V VCTRL 1.5 V + I I +==80 mA 80 mA T A = 25 C TA = 25C Noise Figure (dB) 5 4 3 2 1 0 0 2 4 6 8 10 12 14 Frequency (GHz) TYPICAL OUTPUT POWER 20 P1dB Output Power (dBm) 16 V += 8 VV =8 VCTR L = 1.5 V CTRL = 1.5 V + = 80 mA I + = 80 mA T A = 25 C TA = 25C 12 8 4 0 0 2 4 6 8 10 12 14 Frequency (GHz) TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 2 TGA8349-SCC TYPICAL RETURN LOSS 0 10 V + = 8 VV V =8 = 1.5 VCTRL= 1.5 VV CTR L I ++= 80 mA I = 80 mA TA = 25 C A = 25C + Return Loss (dB) 20 30 40 Input Input Output Output 50 0 2 4 6 8 10 12 14 Frequency (GHz) ABSOLUTE MAXIMUM RATINGS Positive supply voltage, V + .................................................................................................................. 13 V Positive supply voltage range with respect to negative supply voltage, V+ - V - .............................. 0 V to 13 V Positive supply voltage range with r espect to gain control voltage, VCTRL - V + .............................. 0 V to - 13 V Negative supply voltage range, VG1 ............................................................................................ - 5 V to 0 V Gain control voltage range, VCTRL ................................................................................................ - 5 V to 4 V Positive supply current, I+ .............................................................................................................. 144 mA Power dissipation, PD, at (or below) 25C base-plate temperatur e* ...................................................... 2.6 W Input continuous wave power, PIN .................................................................................................... 23 dBm Operating channel temperature, TCH** ......................................................... ..................................... 150C Mounting temperature (30 sec), TM .................................................................................................. 320C Storage temperature range, TSTG ............................................................................................ - 65 to 150C Ratings over channel temperatur e range, TCH (unless otherwise noted) Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any oth er conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25C base -plate temperature, derate linearly at the rate of 5.5 mW/5C. ** Operating channel temperature directly af fects the device MTTF. For maximum life, it is r ecommended that channel temperature be maintained at the lowest possible level. TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 3 TGA8349-SCC TYPICAL S-PARAMETERS Frequency (GHz) MAG S11 ANG() MAG S21 ANG() MAG S12 ANG() MAG S22 ANG() GAIN (dB) 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 0.02 0.02 0.02 0.03 0.02 0.02 0.01 0.01 0.01 0.01 0.02 0.03 0.04 0.06 0.05 0.05 0.04 0.02 0.03 0.05 0.07 0.08 0.09 0.09 0.08 0.08 0.07 0.09 0.13 0.16 0.15 0.10 0.10 115 92 26 -28 -72 -122 -165 139 87 12 -74 -112 -142 -167 167 150 141 163 -166 -162 -167 177 167 156 149 148 160 174 168 151 131 126 160 3.32 3.34 3.36 3.40 3.46 3.51 3.52 3.53 3.51 3.48 3.48 3.48 3.49 3.52 3.51 3.51 3.51 3.52 3.54 3.58 3.63 3.63 3.68 3.68 3.68 3.67 3.65 3.63 3.57 3.46 3.36 3.31 3.13 V+ = 173 155 130 106 80 54 28 2 -24 -50 -76 -101 -127 -154 180 154 127 100 73 46 18 -11 -39 -69 -99 -129 -160 168 135 101 67 30 -10 I+ 0.001 0.003 0.005 0.008 0.011 0.013 0.015 0.017 0.019 0.021 0.024 0.026 0.029 0.032 0.035 0.037 0.039 0.041 0.043 0.045 0.047 0.049 0.054 0.057 0.061 0.066 0.069 0.072 0.072 0.072 0.070 0.071 0.069 85 73 53 31 6 -20 -46 -71 -97 -121 -146 -170 166 144 120 95 71 46 21 -6 -34 -60 -89 -117 -144 -172 160 131 100 68 35 0 -40 0.12 0.12 0.11 0.09 0.05 0.02 0.03 0.05 0.07 0.07 0.06 0.05 0.03 0.01 0.04 0.07 0.10 0.11 0.10 0.07 0.04 0.07 0.12 0.17 0.18 0.16 0.11 0.09 0.16 0.23 0.25 0.19 0.16 180 161 142 112 80 21 -73 -118 -151 -180 155 132 106 -123 -120 -139 -158 -177 165 155 179 -142 -142 -160 -179 163 156 -172 -156 -171 171 161 -171 10.4 10.5 10.5 10.6 10.8 10.9 10.9 10.9 10.9 10.8 10.8 10.8 10.9 10.9 10.9 10.9 10.9 10.9 11.0 11.1 11.2 11.2 11.3 11.3 11.3 11.3 11.3 11.2 11.0 10.8 10.5 10.4 9.9 8 V, VCTRL = 1.5 V, = 80 mA, TA = 25C Reference planes for S -parameter data include bond wir es as specified in the "Recommended Assembly Diagram." TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 4 TGA8349-SCC RF CHARACTERISTICS GP SWR(in) SWR(out) P 1dB NF PARAMETER TEST CONDITIONS TYP UNIT Small-signal power gain Input standing wave ratio Output standing wave ratio Output power at 1-dB gain compression Noise figure Output third harmonic at Pin = -2 dBm Output second harmonic at Pin = -2 dBm f = DC to 14 GHz f = DC to 14 GHz f = DC to 14 GHz f = 7 GHz f = 7 GHz fo = 1 GHz fo = 3 GHz fo = 5 GHz fo = 1 GHz f o = 3 GHz fo = 5 GHz 11 1.2:1 1.3:1 16 3.1 -51 -47 -48 -26 -27 -28 dB dBm dB dBc* dBc* V + = 8 V, VCTRL = 1.5 V, I+ = 80 mA TA = 25C (unless other wise noted) * Unit dBc applies to decibels with r espect to the car rier or fundamental fr equency, f. o DC CHARACTERISTICS PARAMETER TEST CONDITIONS MIN MAX UNIT I DSS Total zero-gate-voltage drain current at saturation VDS = 0.5 V to 3.5 V, V GS = 0 V 131 395 mA T A = 25C VDS for I DSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC autopr obe. THERMAL DATA R jC PARAMETER TEST CONDITIONS FET MMIC UNIT Thermal resistance, V+ = 8 V V DS(FET) = 6.18 V, I D(FET) = 5 mA, channel = 79.6 C 311.4 34.6 channel-to-backside Base = 70C VDS(FET) = 5.08 V, I D(FET) = 8 mA, channel = 82.8 C 314.0 35.0 V DS(FET)= 4.36 V, I D(FET) =10 mA, channel = 83.8 C 315.7 35.2 PARAMETER TEST CONDITIONS R jC jC jC C/W (RES) UNIT R (RES) Thermal resistance of drain termination resistor, 37.7 VRES =1.70 V, I D(MMIC) =45 mA, Base =70 C,R VRES =2.71 V, I D(MMIC) =72 mA, Base =70 C,R VRES =3.39 V, I D(MMIC) =90 mA, Base =70 C,R = 89.5C/W = 89.7C/W = 90.2C/W 76.8 C/W 87.5 97.5 MMIC mounted with 38 m AuSn solder to car rier. I D (MMIC) = 9 x ID (FET). 5 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGA8349-SCC EQUIVALENT SCHEMATIC V+ R1 = 2.8 R2 = 37.7 VD RF Output R3 = 60.6 VCTRL 122m (9 places) R5 = 1.9K RF Input R4 = 48.3 R 6= 1.9K V- V -(AUX) TaN resistors R 1, and R 4 have a tolerance of +/- 16 %. GaAs resistors R 2, R 3, R 5, and R 6 have a tolerance of +/- 30 %. RECOMMENDED ASSEMBLY DIAGRAM Bias conductor V + VCTRL 1000pF RF Output RF Input 1000pF V1000pF RF connections: Thermocompression bond using two 1-mil diameter, 20 to 30-mil-length gold bond wires at RF Input and at RF Output for optimum RF performance. Close placement of this capacitor is critical for performance. 6 TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com TGA8349-SCC MECHANICAL DRAWING 2,2860 (.0900) 2,1117 (.0831) 0,3120 (.0122) 0,4101 (.0161) 3,2283 (.1270) 4 1,6306 (.0641) 3 5 1,4822 (.0583) 1,0331 (.0406) 2 0,5373 (.0215) 0,2395 (.0094) 0 0 1 7 6 0,2386 (.0093) 0,1681 (.0066) 2,9438 (.1158) 3,4290 (.1350) 3,2606 (.1283) 0,1295 (.0050) Units: Millimeters (inches) Thickness: 0,1016 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: 0,0508 (0.002) Bond Bond Bond Bond Bond Bond Bond pad pad pad pad pad pad pad #1 #2 #3 #4 #5 #6 #7 (RF Input): (VCTRL): (VD): (V +): (RF Output): (V -): (V -(AUX)): 0,152 0,102 0,076 0,419 0,254 0,152 0,127 x x x x x x x 0,203 0,152 0,152 0,152 0,330 0,152 0,152 (0.006 (0.004 (0.003 (0.016 (0.010 (0.006 (0.005 x x x x x x x 0.008) 0.006) 0.006) 0.006) 0.013) 0.006) 0.006) TriQuint Semiconductor, Inc. * Texas Facilities * (972) 995-8465 * www.triquint.com 7 |
Price & Availability of TGA8349
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |